2
RF Device Data
Freescale Semiconductor
MRF9080LR3
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 65 Vdc, V
GS
= 0)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 26 Vds, V
GS
= 0)
IDSS
—
—
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 )
IGSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 300
μAdc)
VGS(th)
2.0
—
4.0
Vdc
Gate Quiescent Voltage
(VDS
= 26 Vdc, I
D
= 700 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 2 Adc)
VDS(on)
—
0.19
0.4
Vdc
Forward Transconductance
(VDS
= 10 Vdc, I
D
= 6 Adc)
gfs
—
8.0
—
S
Dynamic Characteristics
(1)
Output Capacitance
(VDS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Coss
—
73
—
pF
Reverse Transfer Capacitance
(VDS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Crss
—
2.9
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Power Output, 1 dB Compression Point
(VDD
= 26 Vdc, I
DQ
= 600 mA, f = 960 MHz)
P1dB
68
75
—
W
Common-Source Amplifier Power Gain @ 70 W (Min)
(VDD
= 26 Vdc, I
DQ
= 600 mA, f = 960 MHz)
Gps
17
18.5
20
dB
Drain Efficiency @ Pout
= 70 W
(VDD
= 26 Vdc, I
DQ
= 600 mA, f = 960 MHz)
η1
47
52
—
%
Drain Efficiency @ P1dB
(VDD
= 26 Vdc, I
DQ
= 600 mA, f = 960 MHz)
η2
—
55
—
%
Input Return Loss
(VDD
= 26 Vdc, P
out
= 70 W, I
DQ
= 600 mA, f = 960 MHz)
IRL
9.5
12.5
—
dB
1. Part is internally input matched.
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